TLV2170IDR

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TLV2170IDR概述

运算放大器, RRO, 2个放大器, 1.2 MHz, 0.4 V/µs, 2.7V 至 36V, ± 1.35V 至 ± 18V, SOIC, 8 引脚

The TLVx170 family of electromagnetic interference EMI-hardened, 36-V, single-supply, low-noise operational amplifiers op amps feature a THD+N of 0.0002% at 1 kHz with the ability to operate on supplies ranging from 2.7 V ±1.35 V to 36 V ±18 V. These features, along with low noise and very high power-supply rejection ratio PSRR, make the single-channel TLV170, dual-channel TLV2170, and quad-channel TLV4170 suitable for use in microvolt-level signal amplification. The TLVx170 family of devices also offer good offset, drift, and bandwidth with low quiescent current.

Unlike most op amps that are specified at only one supply voltage, the TLVx170 family of op amps is specified from 2.7 V to 36 V with the ability to swing input signals beyond the supply rails without phase reversal. The TLVx170 family is also unity-gain stable with a 200-pF capacitive load with a 1.2-MHz bandwidth and a 0.4-V/μs slew rate for use in current-to-voltage converters.

The device inputs can operate 100 mV below the negative rail and within 2 V of the positive rail for normal operation, and with full rail-to-rail input with reduced performance. The TLVx170 devices are specified from –40°C to +125°C.

TLV2170IDR中文资料参数规格
技术参数

供电电流 125 µA

电路数 1

针脚数 8

共模抑制比 95 dB

输入补偿漂移 2.00 µV/K

带宽 1.2 MHz

转换速率 400 mV/μs

增益频宽积 1.2 MHz

输入补偿电压 500 µV

输入偏置电流 10 pA

工作温度Max 125 ℃

工作温度Min -40 ℃

共模抑制比Min 95 dB

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Cut Tape CT

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

TLV2170IDR引脚图与封装图
TLV2170IDR引脚图
TLV2170IDR封装图
TLV2170IDR封装焊盘图
在线购买TLV2170IDR
型号: TLV2170IDR
制造商: TI 德州仪器
描述:运算放大器, RRO, 2个放大器, 1.2 MHz, 0.4 V/µs, 2.7V 至 36V, ± 1.35V 至 ± 18V, SOIC, 8 引脚

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