4Mbit 256K X 16, 512K X 8 BOOT BLOCK FLASH MEMORY FAMILY
PRODUCT FAMILY OVERVIEW
Throughout this datasheet the 28F400BX refers to both the 28F400BX-T and 28F400BX-B devices and 28F004BX refers to both the 28F004BX-T and 28F004BX-B devices. The 4-Mbit flash memory family refers to both the 28F400BX and 28F004BX products. This datasheet comprises the specifications for four separate products in the 4-Mbit flash memory family. Section 1 provides an overview of the 4-Mbit flash memory family including applications, pinouts and pin descriptions.
x8/x16 Input/Output Architecture
28F400BX-T, 28F400BX-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
x8-only Input/Output Architecture
28F004BX-T, 28F004BX-B
For Space Constrained 8-bit Applications
Upgradeable to ’s Smart Voltage Products
Optimized High-Density Blocked Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
Extended Cycling Capability
100,000 Block Erase Cycles
Automated Word/Byte Write and Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
1 mA Typical ICC Active Current in Static Operation
Very High-Performance Read
60/80/120 ns Maximum Access Time
30/40/40 ns Maximum Output Enable Time
Low Power Consumption
20 mA Typical Active Read Current
Reset/Deep Power-Down Input
0.2 mA ICC Typical
Acts as Reset for Boot Operations
Extended Temperature Operation
b40§C to a85§C
Write Protection for Boot Block
Hardware Data Protection Feature
Erase/Write Lockout During Power Transitions
Industry Standard Surface Mount Packaging
28F400BX: JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
28F004BX: 40-Lead TSOP
12V Word/Byte Write and Block Erase
VPP e 12V g5% Standard
VPP e 12V g10% Option
ETOXTM III Flash Technology
5V Read
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TE28F400BX-B80 Intel 英特尔 | 当前型号 | 当前型号 |
E28F400BVB80 英特尔 | 功能相似 | TE28F400BX-B80和E28F400BVB80的区别 |