

TO-220SIS N-CH 650V 8A
Switching Regulator Applications
• Low drain-source ON-resistance: RDS ON= 0.7 Ωtyp.
• High forward transfer admittance: |Yfs| = 4.5 S typ.
• Low leakage current: IDSS= 10 μA max VDS= 650 V
• Enhancement mode: Vth= 2.0 to 4.0 V VDS= 10 V, ID= 1 mA
Win Source:
MOSFET N-CH 650V 5A TO-220SIS
