TLV316QDBVRQ1

TLV316QDBVRQ1图片1
TLV316QDBVRQ1图片2
TLV316QDBVRQ1概述

AEC-Q100、单通道、10MHz、RRIO、低 噪声、低电压、1.8V CMOS 运算放大器 5-SOT-23 -40 to 125

The TLV316-Q1 single, TLV2316-Q1 dual, and TLV4316-Q1 quad devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current 400 µA/ch typical combined with a wide bandwidth of 10 MHz, and very-low noise 12 nV/√Hz at 1 kHz make this family suitable for a circuits requiring a good speed and power ratio. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances. The low-input bias current of the TLVx316-Q1 yields a very-low current noise to make the family attractive for high impedance sensor interfaces.

The robust design of the TLVx316-Q1 provides ease-of-use to the circuit designer: a unity-gain stable, integrated RFI and EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge ESD protection 4-kV HBM.

These devices are optimized for low-voltage operation as low as 1.8 V ±0.9 V and up to 5.5 V ±2.75 V. This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313-Q1 and TLVx314-Q1 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.

TLV316QDBVRQ1中文资料参数规格
技术参数

供电电流 400 µA

电路数 1

增益频宽积 10 MHz

输入偏置电流 0.00001μA @5.5V

工作温度Max 125 ℃

工作温度Min -40 ℃

共模抑制比Min 72 dB

封装参数

安装方式 Surface Mount

引脚数 5

封装 SOT-23-5

外形尺寸

封装 SOT-23-5

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

数据手册

TLV316QDBVRQ1引脚图与封装图
TLV316QDBVRQ1引脚图
TLV316QDBVRQ1封装图
TLV316QDBVRQ1封装焊盘图
在线购买TLV316QDBVRQ1
型号: TLV316QDBVRQ1
制造商: TI 德州仪器
描述:AEC-Q100、单通道、10MHz、RRIO、低 噪声、低电压、1.8V CMOS 运算放大器 5-SOT-23 -40 to 125

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