双共基极 - 集电极偏置电阻晶体管 Dual Common Base-Collector Bias Resistor Transistors
- 双极 BJT - 阵列 - 预偏置 1 个 NPN,1 个 PNP - 预偏压式(双) 50V 100mA - 150mW 表面贴装型 SC-88A(SC-70-5/SOT-353)
得捷:
TRANS NPN/PNP PREBIAS 0.15W SC70
立创商城:
UMC3NT1G
贸泽:
双极晶体管 - 预偏置 100mA Complementary 50V Dual NPN & PNP
艾睿:
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The npn and PNP UMC3NT1G digital transistor from ON Semiconductor is your solution. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a dual common base and collector configuration.
安富利:
Trans Digital BJT NPN/PNP 50V 100mA 5-Pin SC-70 T/R
Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R
Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R
Win Source:
TRANS NPN/PNP PREBIAS 0.15W SC70
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN, PNP
耗散功率 150 mW
集电极击穿电压 50.0 V
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 35 @5mA, 10V
最大电流放大倍数hFE 35
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 5
封装 SC-88-5
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SC-88-5
工作温度 -65℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UMC3NT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
UMC3NT1 安森美 | 类似代替 | UMC3NT1G和UMC3NT1的区别 |