ULN2004AIDR

高压大电流达林顿晶体管阵列 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY

- 双极 BJT - 阵列 7 NPN 达林顿 50V 500mA - - 表面贴装型 16-SOIC

得捷:
TRANS 7NPN DARL 50V 0.5A 16SOIC

立创商城:
ULN2004AIDR

德州仪器TI:
50-V, 7-ch darlington transistor array with 15-V input capability, -40 to 105C

艾睿:
Look no further than Texas Instruments&s; NPN ULN2004AIDR Darlington transistor, which can amplify the signal to provide higher current gains. This product&s;s maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This Darlington transistor array has an operating temperature range of -40 °C to 105 °C. It has a maximum collector emitter voltage of 50 V.

安富利:
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R

Chip1Stop:
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R

Verical:
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R

Newark:
# TEXAS INSTRUMENTS  ULN2004AIDR  Bipolar Transistor Array, Darlington, NPN, 50 V, 500 mA, SOIC