UB20BCT-E3/8W

整流器 20A,100V,35NS,DUAL FER PLANAR

FEATURES

• Oxide planar chip junction

• Ultrafast recovery time

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AB package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

得捷:
DIODE RECT 20A 100V 35NS TO263AB

贸泽:
整流器 20A,100V,35NS,DUAL FER PLANAR

艾睿:
Diode Switching 100V 20A 3-Pin2+Tab TO-263AB T/R

安富利:
20A,100V,35NS,DUAL FER PLANAR