Trans RF BJT NPN 12V 0.1A 6Pin SOT-363 T/R
RF 2 NPN(双) 12V 100mA 4.5GHz 200mW 表面贴装型 SOT-363
得捷:
RF TRANS 2 NPN 12V 4.5GHZ SOT363
艾睿:
Compared to other transistors, the UPA810T-T1-A RF bi-polar junction transistor, developed by California Eastern Laboratories, can properly function in the event of high radio frequency power situations. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 12V 0.1A 6-Pin SOT-363 Embossed T/R
Chip1Stop:
Trans GP BJT NPN 12V 0.1A 6-Pin SOT-363 T/R
Verical:
Trans RF BJT NPN 12V 0.1A 6-Pin SOT-363 T/R
DeviceMart:
TRANSISTOR NPN FT=4.5GHZ SOT363
Win Source:
RF DUAL TRANSISTORS NPN SOT-363
频率 4500 MHz
耗散功率 0.2 W
击穿电压集电极-发射极 12 V
增益 9 dB
最小电流放大倍数hFE 70 @7mA, 3V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
高度 0.9 mm
封装 SC-70-6
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UPA810T-T1-A California Eastern Laboratories | 当前型号 | 当前型号 |
UPA810T-A California Eastern Laboratories | 类似代替 | UPA810T-T1-A和UPA810T-A的区别 |
UPA810T-T1 California Eastern Laboratories | 功能相似 | UPA810T-T1-A和UPA810T-T1的区别 |