双4 -A高速低侧MOSFET驱动器与启用 Dual 4-A High Speed Low-Side MOSFET Drivers With Enable
Use the power driver from Texas Instruments for fast switching. This device has a maximum propagation delay time of 150 ns and a maximum power dissipation of 650 mW. Its maximum power dissipation is 650 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4 V and a maximum of 15 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 105 °C.
上升/下降时间 20ns, 15ns
输出接口数 2
输出电流 4 A
耗散功率 650 mW
上升时间 20 ns
下降时间 15 ns
下降时间Max 40 ns
上升时间Max 40 ns
工作温度Max 105 ℃
工作温度Min -40 ℃
耗散功率Max 650 mW
电源电压 4V ~ 15V
电源电压Max 15 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
UCC27425DR TI 德州仪器 | 当前型号 | 当前型号 |
UCC27425D 德州仪器 | 完全替代 | UCC27425DR和UCC27425D的区别 |
UCC27325D 德州仪器 | 类似代替 | UCC27425DR和UCC27325D的区别 |
UCC37325D 德州仪器 | 类似代替 | UCC27425DR和UCC37325D的区别 |