UCC37325DGNR

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UCC37325DGNR概述

双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers

低端 栅极驱动器 IC 反相,非反相 8-MSOP-PowerPad


得捷:
IC GATE DRVR LOW-SIDE 8MSOP


立创商城:
低边 MOSFET 灌:4A 拉:4A


德州仪器TI:
4-A/4-A dual-channel gate driver with one inverting, one non-inverting input


贸泽:
门驱动器 Dual 4 A Peak High Speed Low-Side


艾睿:
Transistors are a crucial component but for high powered designs this UCC37325DGNR power driver by Texas Instruments is a crucial component. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 2120 mW. Its maximum power dissipation is 2120 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V. This gate driver has an operating temperature range of 0 °C to 70 °C.


安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin HTSSOP EP T/R


Verical:
Driver 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin HVSSOP EP T/R


Win Source:
IC DUAL HS PWR FET DRIVER 8MSOP


UCC37325DGNR中文资料参数规格
技术参数

上升/下降时间 20ns, 15ns

输出接口数 2

输出电流 4 A

耗散功率 2120 mW

上升时间 23 ns

下降时间 23 ns

下降时间Max 40 ns

上升时间Max 40 ns

工作温度Max 70 ℃

工作温度Min 0 ℃

耗散功率Max 2120 mW

电源电压 4.5V ~ 15V

封装参数

安装方式 Surface Mount

引脚数 8

封装 PowerPad-MSOP-8

外形尺寸

封装 PowerPad-MSOP-8

物理参数

工作温度 0℃ ~ 70℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

UCC37325DGNR引脚图与封装图
UCC37325DGNR引脚图
UCC37325DGNR封装图
UCC37325DGNR封装焊盘图
在线购买UCC37325DGNR
型号: UCC37325DGNR
制造商: TI 德州仪器
描述:双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
替代型号UCC37325DGNR
型号/品牌 代替类型 替代型号对比

UCC37325DGNR

TI 德州仪器

当前型号

当前型号

UCC37325DGNG4

德州仪器

完全替代

UCC37325DGNR和UCC37325DGNG4的区别

UCC37325DGN

德州仪器

类似代替

UCC37325DGNR和UCC37325DGN的区别

UCC37325DGNRG4

德州仪器

类似代替

UCC37325DGNR和UCC37325DGNRG4的区别

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