双4 -A高速低侧MOSFET驱动器与启用 Dual 4-A High Speed Low-Side MOSFET Drivers With Enable
Ideal for high voltage transistors this power driver manufactured by Texas Instruments will help switch junction. This device has a maximum propagation delay time of 150 ns and a maximum power dissipation of 650 mW. Its maximum power dissipation is 650 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -40 °C and a maximum of 105 °C. This device has a minimum operating supply voltage of 4 V and a maximum of 15 V.
电源电压DC 4.00V min
上升/下降时间 20ns, 15ns
输出接口数 2
耗散功率 0.65 W
上升时间 40 ns
下降时间 40 ns
下降时间Max 40 ns
上升时间Max 40 ns
工作温度Max 105 ℃
工作温度Min -40 ℃
耗散功率Max 650 mW
电源电压 4V ~ 15V
电源电压Max 15 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 105℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UCC27424DR TI 德州仪器 | 当前型号 | 当前型号 |
UCC27423DR 德州仪器 | 完全替代 | UCC27424DR和UCC27423DR的区别 |
UCC27423DG4 德州仪器 | 完全替代 | UCC27424DR和UCC27423DG4的区别 |
UCC27424D 德州仪器 | 类似代替 | UCC27424DR和UCC27424D的区别 |