TEXAS INSTRUMENTS UCC27425D 驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。
### MOSFET & IGBT 驱动器,Texas Instruments
欧时:
Texas Instruments UCC27425D 双 MOSFET 功率驱动器, 4A, 4 → 15 V电源, 8引脚 SOIC封装
得捷:
IC GATE DRVR LOW-SIDE 8SOIC
立创商城:
UCC27425D
德州仪器TI:
4-A/4-A dual-channel gate driver with enable and inverting/non-inverting inputs
贸泽:
门驱动器 Dual 4-A with Enable
e络盟:
MOSFET驱动器, 低压侧, 4V-15V电源, 4A和30ohm输出, SOIC-8
艾睿:
Say goodbye to transistors not being provided proper biasing current by using this UCC27425D power driver by Texas Instruments. This device has a maximum propagation delay time of 150 ns and a maximum power dissipation of 650 mW. Its maximum power dissipation is 650 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 105 °C. This device has a minimum operating supply voltage of 4 V and a maximum of 15 V.
Chip1Stop:
Driver 4A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC Tube
Verical:
Driver 4A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC Tube
Newark:
# TEXAS INSTRUMENTS UCC27425D MOSFET DRIVER, DUAL, LOW-SIDE, SOIC-8
电源电压DC 4.00V min
上升/下降时间 20ns, 15ns
输出接口数 2
输出电压 330 mV
输出电流 4 A
针脚数 8
耗散功率 650 mW
上升时间 20 ns
下降时间 15 ns
下降时间Max 40 ns
上升时间Max 40 ns
工作温度Max 105 ℃
工作温度Min -40 ℃
耗散功率Max 650 mW
电源电压 4V ~ 15V
电源电压Max 15 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.91 mm
高度 1.58 mm
封装 SOIC-8
工作温度 -40℃ ~ 105℃
产品生命周期 Active
包装方式 Tube
制造应用 电机驱动与控制, 信号处理, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UCC27425D TI 德州仪器 | 当前型号 | 当前型号 |
UCC27425DR 德州仪器 | 完全替代 | UCC27425D和UCC27425DR的区别 |
UCC27325D 德州仪器 | 类似代替 | UCC27425D和UCC27325D的区别 |
UCC37325D 德州仪器 | 类似代替 | UCC27425D和UCC37325D的区别 |