双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
低端 栅极驱动器 IC 反相,非反相 8-SOIC
得捷:
IC MOSFET DRIVR DUAL HS 4A 8SOIC
立创商城:
UCC27325DR
德州仪器TI:
4-A/4-A dual-channel gate driver with one inverting, one non-inverting input and hystertic logic
艾睿:
Change state in a high power transistor by implementing this UCC27325DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC T/R
Verical:
Driver 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R
上升/下降时间 20ns, 15ns
输出接口数 2
耗散功率 1.14 W
上升时间 40 ns
输出电流Max 4.5 A
下降时间 40 ns
下降时间Max 40 ns
上升时间Max 40 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1140 mW
电源电压 4.5V ~ 15V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UCC27325DR TI 德州仪器 | 当前型号 | 当前型号 |
UCC27325D 德州仪器 | 完全替代 | UCC27325DR和UCC27325D的区别 |
UCC27425D 德州仪器 | 类似代替 | UCC27325DR和UCC27425D的区别 |
UCC37325D 德州仪器 | 类似代替 | UCC27325DR和UCC37325D的区别 |