UCC27325DR

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UCC27325DR概述

双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers

低端 栅极驱动器 IC 反相,非反相 8-SOIC


得捷:
IC MOSFET DRIVR DUAL HS 4A 8SOIC


立创商城:
UCC27325DR


德州仪器TI:
4-A/4-A dual-channel gate driver with one inverting, one non-inverting input and hystertic logic


艾睿:
Change state in a high power transistor by implementing this UCC27325DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R


Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC T/R


Verical:
Driver 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R


UCC27325DR中文资料参数规格
技术参数

上升/下降时间 20ns, 15ns

输出接口数 2

耗散功率 1.14 W

上升时间 40 ns

输出电流Max 4.5 A

下降时间 40 ns

下降时间Max 40 ns

上升时间Max 40 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

耗散功率Max 1140 mW

电源电压 4.5V ~ 15V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

UCC27325DR引脚图与封装图
UCC27325DR引脚图
UCC27325DR封装图
UCC27325DR封装焊盘图
在线购买UCC27325DR
型号: UCC27325DR
制造商: TI 德州仪器
描述:双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
替代型号UCC27325DR
型号/品牌 代替类型 替代型号对比

UCC27325DR

TI 德州仪器

当前型号

当前型号

UCC27325D

德州仪器

完全替代

UCC27325DR和UCC27325D的区别

UCC27425D

德州仪器

类似代替

UCC27325DR和UCC27425D的区别

UCC37325D

德州仪器

类似代替

UCC27325DR和UCC37325D的区别

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