双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
低端 栅极驱动器 IC 反相 8-SOIC
得捷:
IC DUAL HS POWER FET DRIVR 8SOIC
立创商城:
低边 MOSFET 灌:4A 拉:4A
德州仪器TI:
4-A/4-A dual-channel gate driver with inverting inputs
艾睿:
Correctly change the biasing voltage to a high power transistor by using this UCC37323DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.
安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R
Verical:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R
Win Source:
IC DUAL HS POWER FET DRIVR 8SOIC
电源电压DC 4.00V min
上升/下降时间 20ns, 15ns
输出接口数 2
耗散功率 1.14 W
上升时间 40 ns
输出电流Max 4.5 A
下降时间 40 ns
下降时间Max 40 ns
上升时间Max 40 ns
工作温度Max 70 ℃
工作温度Min 0 ℃
耗散功率Max 1140 mW
电源电压 4.5V ~ 15V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UCC37323DR TI 德州仪器 | 当前型号 | 当前型号 |
UCC27324DR 德州仪器 | 类似代替 | UCC37323DR和UCC27324DR的区别 |
UCC27324D 德州仪器 | 类似代替 | UCC37323DR和UCC27324D的区别 |
UCC37323D 德州仪器 | 类似代替 | UCC37323DR和UCC37323D的区别 |