UCC37323DR

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UCC37323DR概述

双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers

低端 栅极驱动器 IC 反相 8-SOIC


得捷:
IC DUAL HS POWER FET DRIVR 8SOIC


立创商城:
低边 MOSFET 灌:4A 拉:4A


德州仪器TI:
4-A/4-A dual-channel gate driver with inverting inputs


艾睿:
Correctly change the biasing voltage to a high power transistor by using this UCC37323DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.


安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv 8-Pin SOIC T/R


Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R


Verical:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R


Win Source:
IC DUAL HS POWER FET DRIVR 8SOIC


UCC37323DR中文资料参数规格
技术参数

电源电压DC 4.00V min

上升/下降时间 20ns, 15ns

输出接口数 2

耗散功率 1.14 W

上升时间 40 ns

输出电流Max 4.5 A

下降时间 40 ns

下降时间Max 40 ns

上升时间Max 40 ns

工作温度Max 70 ℃

工作温度Min 0 ℃

耗散功率Max 1140 mW

电源电压 4.5V ~ 15V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

UCC37323DR引脚图与封装图
UCC37323DR引脚图
UCC37323DR封装图
UCC37323DR封装焊盘图
在线购买UCC37323DR
型号: UCC37323DR
制造商: TI 德州仪器
描述:双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
替代型号UCC37323DR
型号/品牌 代替类型 替代型号对比

UCC37323DR

TI 德州仪器

当前型号

当前型号

UCC27324DR

德州仪器

类似代替

UCC37323DR和UCC27324DR的区别

UCC27324D

德州仪器

类似代替

UCC37323DR和UCC27324D的区别

UCC37323D

德州仪器

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UCC37323DR和UCC37323D的区别

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