MOSFET & IGBT Drivers, 3A to 5A, Texas InstrumentsTexas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。
得捷:
IC GATE DRVR LOW-SIDE 8SON
立创商城:
低边 IGBT MOSFET 灌:5A 拉:5A
德州仪器TI:
5-A/5-A dual-channel gate driver with 5-V UVLO, enable, and inverting/non-inverting inputs
欧时:
Texas Instruments UCC27525DSDT 双 MOSFET 功率驱动器, 5A, 4.5 → 18 V电源, 8引脚 SON封装
贸泽:
门驱动器 Dual,5A,Hi-Spd Low- Side Pwr MOSFET Drvr
艾睿:
Use the UCC27525DSDT power driver from Texas Instruments to turn on and off your high-power transistors! Its typical operating supply voltage is 12 V. This device has a maximum propagation delay time of 23 ns. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -40 °C and a maximum of 140 °C. This device has a typical operating supply voltage of 12 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 18 V.
安富利:
MOSFET DRVR 5A 2-OUT Lo Side Inv/Non-Inv 8-Pin WSON T/R
Chip1Stop:
Driver 5A 2-OUT Lo Side Inv/Non-Inv 8-Pin WSON EP T/R
Verical:
Driver 5A 2-OUT Low Side Inv/Non-Inv 8-Pin WSON EP T/R
电源电压DC 4.50V min
上升/下降时间 7ns, 6ns
输出接口数 2
输出电流 5 A
上升时间 7 ns
下降时间 7 ns
下降时间Max 10 ns
上升时间Max 18 ns
工作温度Max 140 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 18V
电源电压Max 18 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 8
封装 WDFN-8
长度 3.1 mm
宽度 3.1 mm
高度 0.75 mm
封装 WDFN-8
工作温度 -40℃ ~ 140℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99