











MOSFET & IGBT Drivers, 3A to 5A, Texas InstrumentsTexas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR LOW-SIDE SOT23-5
立创商城:
低边 IGBT MOSFET 灌:2.5A 拉:2.5A
德州仪器TI:
2.5-A/5-A single-channel gate driver with 8-V UVLO, 35-V VDD, and inverting input
欧时:
Texas Instruments UCC27536DBVT MOSFET 功率驱动器, 5A, 10 → 32 V电源, 5引脚 SOT-23封装
艾睿:
Switch between states in a high power transistor by using this UCC27536DBVT power driver developed by Texas Instruments. Its typical operating supply voltage is 18 V. This device has a maximum propagation delay time of 20typ ns. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has an operating temperature range of -40 °C to 140 °C. This device has a typical operating supply voltage of 18 V. Its minimum operating supply voltage of 10 V, while its maximum is 32 V.
安富利:
MOSFET DRVR 5A 1-OUT Hi/Lo Side Inv 5-Pin SOT-23 T/R
Chip1Stop:
Driver 5A 1-OUT Hi/Lo Side Inv 5-Pin SOT-23 T/R
Verical:
Driver 5A 1-OUT Hi/Lo Side Inv 5-Pin SOT-23 T/R
Newark:
# TEXAS INSTRUMENTS UCC27536DBVT MOSFET Driver, High Side and Low Side, 10V-32V supply, 5A output, SOT-23-5
电源电压DC 10.0V min
上升/下降时间 15ns, 10ns
输出接口数 1
上升时间 15 ns
下降时间 7 ns
下降时间Max 7 ns
上升时间Max 15 ns
工作温度Max 140 ℃
工作温度Min -40 ℃
电源电压 10V ~ 32V
电源电压Max 32 V
电源电压Min 10 V
安装方式 Surface Mount
引脚数 5
封装 SOT-23-5
长度 3.05 mm
宽度 1.75 mm
高度 1.3 mm
封装 SOT-23-5
工作温度 -40℃ ~ 140℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
UCC27536DBVT TI 德州仪器 | 当前型号 | 当前型号 |
UCC27536DBVR 德州仪器 | 完全替代 | UCC27536DBVT和UCC27536DBVR的区别 |