












单9A高速低侧MOSFET驱动器与启用 SINGLE 9-A HIGH SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE
低端 栅极驱动器 IC 非反相 8-SOIC
得捷:
IC GATE DRVR LOW-SIDE 8SOIC
立创商城:
UCC27322DR
德州仪器TI:
9-A/9-A single-channel gate driver with split outputs and enable
艾睿:
Ideal for high voltage transistors this UCC27322DR power driver manufactured by Texas Instruments will help switch junction. This device has a maximum propagation delay time of 70 ns and a maximum power dissipation of 650 mW. Its maximum power dissipation is 650 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4 V and a maximum of 15 V. This gate driver has an operating temperature range of -40 °C to 105 °C.
安富利:
MOSFET DRVR 9A 1-OUT Lo Side Non-Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 9A 1-OUT Low Side Non-Inv 8-Pin SOIC T/R
Verical:
Driver 9A 1-OUT Low Side Non-Inv 8-Pin SOIC T/R
Newark:
# TEXAS INSTRUMENTS UCC27322DR MOSFET Driver, Low Side, 4V-15V supply, 9A and 15 ohm output, SOIC-8
Win Source:
IC MOSFET DRIVER SGL HS 9A 8SOIC
电源电压DC 4.00V min
上升/下降时间 20 ns
输出接口数 1
耗散功率 0.65 W
上升时间 70 ns
下降时间 30 ns
下降时间Max 30 ns
上升时间Max 70 ns
工作温度Max 105 ℃
工作温度Min -40 ℃
耗散功率Max 650 mW
电源电压 4V ~ 15V
电源电压Max 15 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 105℃ TA
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
UCC27322DR TI 德州仪器 | 当前型号 | 当前型号 |
UCC27322DG4 德州仪器 | 完全替代 | UCC27322DR和UCC27322DG4的区别 |
UCC27322DRG4 德州仪器 | 完全替代 | UCC27322DR和UCC27322DRG4的区别 |
UCC27322D 德州仪器 | 类似代替 | UCC27322DR和UCC27322D的区别 |