UCC27201ADR

UCC27201ADR图片1
UCC27201ADR图片2
UCC27201ADR图片3
UCC27201ADR图片4
UCC27201ADR图片5
UCC27201ADR图片6
UCC27201ADR图片7
UCC27201ADR图片8
UCC27201ADR概述

120 -V启动, 3 - A峰值,高频率,高侧/低侧驱动器 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

半桥 栅极驱动器 IC 非反相 8-SOIC


得捷:
IC GATE DRVR HALF-BRIDGE 8SOIC


立创商城:
半桥 MOSFET 灌:3A 拉:3A


德州仪器TI:
3-A, 120-V half bridge gate driver with 8-V UVLO and negative voltage handling


艾睿:
Say goodbye to transistors not being provided proper biasing current by using this UCC27201ADR power driver by Texas Instruments. Its typical operating supply voltage is 12 V. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 1300 mW. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a typical operating supply voltage of 12 V. Its minimum operating supply voltage of 8 V, while its maximum is 17 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 140 °C.


Chip1Stop:
Driver 3A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R


Verical:
Driver 3A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC T/R


UCC27201ADR中文资料参数规格
技术参数

上升/下降时间 8ns, 7ns

输出接口数 2

耗散功率 1.3 W

上升时间 8 ns

下降时间 7 ns

下降时间Max 7 ns

上升时间Max 8 ns

工作温度Max 140 ℃

工作温度Min -40 ℃

耗散功率Max 1300 mW

电源电压 8V ~ 17V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 140℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

UCC27201ADR引脚图与封装图
UCC27201ADR引脚图
UCC27201ADR封装图
UCC27201ADR封装焊盘图
在线购买UCC27201ADR
型号: UCC27201ADR
制造商: TI 德州仪器
描述:120 -V启动, 3 - A峰值,高频率,高侧/低侧驱动器 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver
替代型号UCC27201ADR
型号/品牌 代替类型 替代型号对比

UCC27201ADR

TI 德州仪器

当前型号

当前型号

UCC27201AD

德州仪器

完全替代

UCC27201ADR和UCC27201AD的区别

锐单商城 - 一站式电子元器件采购平台