MOSFET & IGBT Drivers, 6A to 10A, Texas InstrumentsTexas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。### MOSFET & IGBT 驱动器,Texas Instruments
MOSFET & IGBT Drivers, 6A to 10A, Texas Instruments
Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
IC GATE DRVR LOW-SIDE TO220-5
欧时:
Texas Instruments UC2710T MOSFET 功率驱动器, 6A, 4.7 → 18 V电源, 5引脚 TO-220封装
艾睿:
Use the UC2710T power driver from Texas Instruments in your design to power on and off your gates. This device has a maximum propagation delay time of 30 ns and a maximum power dissipation of 3000 mW. Its maximum power dissipation is 3000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.7 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 85 °C.
安富利:
MOSFET DRVR 6A 1-OUT High Speed Inv/Non-Inv 5-Pin5+Tab TO-220
Chip1Stop:
Driver 6A 1-OUT High Speed Inv/Non-Inv 5-Pin5+Tab TO-220
Verical:
Driver 6A 1-OUT High Speed Inv/Non-Inv 5-Pin5+Tab TO-220 Tube
Newark:
# TEXAS INSTRUMENTS UC2710T MOSFET Driver, Low Side, 4.7V-18V supply, 6A output, TO-220-5
罗切斯特:
Driver 6A 1-OUT High Speed Inv/Non-Inv 5-Pin5+Tab TO-220
电源电压DC 4.70V min
上升/下降时间 85 ns
输出接口数 1
耗散功率 3 W
上升时间 70 ns
下降时间 80 ns
下降时间Max 80 ns
上升时间Max 70 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
耗散功率Max 3000 mW
电源电压 4.7V ~ 18V
电源电压Max 18 V
电源电压Min 4.7 V
安装方式 Through Hole
引脚数 5
封装 TO-220-5
长度 10.16 mm
宽度 4.58 mm
高度 8.51 mm
封装 TO-220-5
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UC2710T TI 德州仪器 | 当前型号 | 当前型号 |
UC2710TG3 德州仪器 | 类似代替 | UC2710T和UC2710TG3的区别 |
UCC27321P 德州仪器 | 功能相似 | UC2710T和UCC27321P的区别 |
UCC27321PE4 德州仪器 | 功能相似 | UC2710T和UCC27321PE4的区别 |