TEXAS INSTRUMENTS UC3709N 芯片, MOSFET驱动器, 双路
MOSFET 和 IGBT 驱动器,高达 2.5A,Texas Instruments
Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。
### MOSFET & IGBT 驱动器,Texas Instruments
欧时:
Texas Instruments UC3709N 双 MOSFET 功率驱动器, 1.5A, 5 to 40 V电源, 8引脚 PDIP封装
得捷:
IC GATE DRVR LOW-SIDE 8DIP
立创商城:
低边 MOSFET 灌:1.5A 拉:1.5A
德州仪器TI:
1.5-A/1.5-A dual-channel gate driver with 40-V VDD, 25-ns prop delay, and regulated 5-V output
e络盟:
芯片, MOSFET驱动器, 双路
艾睿:
Working with high voltage decision making circuits? This UC3709N power driver by Texas Instruments will properly help switch states. This device has a maximum propagation delay time of 25 ns and a maximum power dissipation of 1000 mW. Its maximum power dissipation is 1000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 5 V and a maximum of 40 V. This gate driver has an operating temperature range of 0 °C to 70 °C.
安富利:
MOSFET DRVR 1.5A 2-OUT High Speed Inv 8-Pin PDIP Tube
Chip1Stop:
Driver 1.5A 2-OUT High Speed Inv 8-Pin PDIP Tube
Verical:
Driver 1.5A 2-OUT High Speed Inv 8-Pin PDIP Tube
Newark:
# TEXAS INSTRUMENTS UC3709N MOSFET Driver Dual, Inverting, 5V-40V supply, 1.5A peak out, DIP-8
Win Source:
IC INVERTING MOSFET DRVR 8-DIP
电源电压DC 40.0V max
上升/下降时间 20 ns
输出接口数 2
耗散功率 1 W
上升时间 80 ns
输出电流Max 1.5 A
下降时间 80 ns
下降时间Max 80 ns
上升时间Max 80 ns
工作温度Max 70 ℃
工作温度Min 0 ℃
耗散功率Max 1000 mW
电源电压 5V ~ 40V
电源电压Max 40 V
电源电压Min 5 V
安装方式 Through Hole
引脚数 8
封装 PDIP-8
长度 9.81 mm
宽度 6.35 mm
高度 4.57 mm
封装 PDIP-8
工作温度 -55℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UC3709N TI 德州仪器 | 当前型号 | 当前型号 |
UC2709N 德州仪器 | 类似代替 | UC3709N和UC2709N的区别 |
UC2709NG4 德州仪器 | 类似代替 | UC3709N和UC2709NG4的区别 |
UC3709J 德州仪器 | 类似代替 | UC3709N和UC3709J的区别 |