UP0431200L NPN+PNP复合三极管 50V/-50V 100mA/-100mA 60 SOT-563 标记7T 用于开关/数字电路
Q1 集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- Q1集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V Q1集电极连续输出电流IC Collector CurrentIC | 100MA/0.1A Q2 集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | -50V Q2集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | -50V Q2集电极连续输出电流IC Collector CurrentIC | -100MA/-0.1A Q1基极输入电阻R1 Input ResistanceR1 | 22KΩ Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22KΩ Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 22KΩ Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22KΩ Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE Q1/Q2 | 60/60 截止频率fT Transtion FrequencyfT Q1/Q2 | 150MHZ/80MHZ 耗散功率Pc Power Dissipation | 125MW/0.125W Description & Applications | Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2 For switching/digital circuits ■ Features • Two elements incorporated into one package Transistors with built-in resistor • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2212 + UNR2112 描述与应用 | NPN型硅外延平面类型Tr1 PNP型硅外延平面类型Tr2 开关/数字电路 ■特性 两个元素纳入一个包内置电阻 减少一半的安装面积和组装成本 ■基本零件号 UNR2212 + UNR2112