UP0339000L

特点•NPN硅外延平面型（TR1）硅PNP外延平面型（TR2）•两个要素纳入一个包（内置电阻晶体管）•减少安装面积和汇编一半的费用。

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V/-50V 集电极连续输出电流IC Collector CurrentIC| 100mA/-100mA 截止频率fT Transtion FrequencyfT| 150MHz/80MHz 直流电流增益hFE DC Current GainhFE| 80 管压降VCE（sat） Collector-Emitter Saturation Voltage| 250mV/-250mV 耗散功率Pc Power Dissipation| 125mW Description & Applications| Features • Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2 • Two elements incorporated into one package transistors with built-in resistor • Reduction of the mounting area and assembly cost by one half. 描述与应用| 特点 •NPN硅外延平面型（TR1）硅PNP外延平面型（TR2） •两个要素纳入一个包（内置电阻） •减少安装面积和汇编一半的费用。