UP0487800L

UP0487800L 复合场效应管 50V 100mA/0.1A SOT-563 marking/标记 7Y 开关 2.5V驱动

最大源漏极电压VdsDrain-Source Voltage| 50V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 7V 最大漏极电流IdDrain Current| 100mA/0.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1200mΩ@ VGS = 4V, ID = 10mA 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.9~1.5V 耗散功率PdPower Dissipation| 125mW/0.125W Description & Applications| Silicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half 描述与应用| 硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •减少安装面积和装配成本的一半