Rectifiers 10A 200V 20ns Dual 55A IFSM
FEATURES
• Glass passivated chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder dip 260 °C, 40 s for TO-220AB and ITO-220AB package
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
得捷:
DIODE ARRAY GP 200V 5A TO263AB
安富利:
Diode Switching 200V 10A 3-Pin2+Tab TO-263AB Tube
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
UGB10DCTHE3/45 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
UGB10DCTHE3/81 威世 | 完全替代 | UGB10DCTHE3/45和UGB10DCTHE3/81的区别 |
UGB10DCT-E3/45 威世 | 完全替代 | UGB10DCTHE3/45和UGB10DCT-E3/45的区别 |
UGB10DCT-E3/81 威世 | 完全替代 | UGB10DCTHE3/45和UGB10DCT-E3/81的区别 |