UGB10DCTHE3/81

整流器 10 Amp 200 Volt 20ns Dual 55 Amp IFSM

FEATURES

• Glass passivated chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AB and ITO-220AB package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

得捷:
DIODE ARRAY GP 200V 5A TO263AB

贸泽:
整流器 10 Amp 200 Volt 20ns Dual 55 Amp IFSM

安富利:
Diode Switching 200V 10A 3-Pin2+Tab TO-263AB T/R