UMF17N NPN+PNP复合带阻尼三极管 -60V/50V -150mA/100mA 180~390 150mW/0.15W SOT-363/UMT6/SC-88/SC70-6 标记F17 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -60V/50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V/50V 集电极连续输出电流IC Collector CurrentIC| -150mA/100mA Q1基极输入电阻R1 Input ResistanceR1| Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Q1电阻比R1/R2 Q1 Resistance Ratio| Q2基极输入电阻R1 Input ResistanceR1| 2.2KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 2.2KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 180~390 截止频率fT Transtion FrequencyfT| 140MHz/250MHz 耗散功率Pc Power Dissipation| 150mW/0.15W Description & Applications| Features • Power management dual transistors • Power switching circuit in a single package. • Mounting cost and area can be cut in half. 描述与应用| 特点 •电源管理(双晶体管) •电源开关电路,在单一封装中。 •安装成本和面积可减少一半
封装 SOT-363
封装 SOT-363
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO -60V/50V
集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO -50V/50V
集电极连续输出电流IC Collector CurrentIC -150mA/100mA
Q2基极输入电阻R1 Input ResistanceR1 2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 2.2KΩ/Ohm
Q2电阻比R1/R2 Q2 Resistance Ratio 1
直流电流增益hFE DC Current GainhFE 180~390
截止频率fT Transtion FrequencyfT 140MHz/250MHz
耗散功率Pc Power Dissipation 150mW/0.15W
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