DIODE FAST REC 1kV 1A DO214AC
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
得捷:
DIODE GEN PURP 1KV 1A DO214AC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
US1MHE3/5AT Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
US1MHE3_A/I 威世 | 类似代替 | US1MHE3/5AT和US1MHE3_A/I的区别 |
S1M-E3/61T 威世 | 功能相似 | US1MHE3/5AT和S1M-E3/61T的区别 |
US1M-E3/61T 威世 | 功能相似 | US1MHE3/5AT和US1M-E3/61T的区别 |