整流器 RECOMMENDED ALT 78-US1BHE3_A/H
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
得捷:
DIODE GEN PURP 100V 1A DO214AC
贸泽:
整流器 RECOMMENDED ALT 78-US1BHE3_A/H
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
US1BHE3/61T Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
US1BHE3_A/H 威世 | 完全替代 | US1BHE3/61T和US1BHE3_A/H的区别 |
ES1D-E3/61T 威世 | 类似代替 | US1BHE3/61T和ES1D-E3/61T的区别 |
ES1B-E3/61T 威世 | 类似代替 | US1BHE3/61T和ES1B-E3/61T的区别 |