DIODE FAST REC 800V 1A DO214AC
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
得捷:
DIODE GEN PURP 800V 1A DO214AC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
US1KHE3/61T Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
US1KHE3_A/H 威世 | 完全替代 | US1KHE3/61T和US1KHE3_A/H的区别 |
MRA4006T3G 安森美 | 功能相似 | US1KHE3/61T和MRA4006T3G的区别 |
STTH108A 意法半导体 | 功能相似 | US1KHE3/61T和STTH108A的区别 |