高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for TO-220AB, ITO-220AB, and TO-262AA package
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VF20120S-E3/4W Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
VF20120S-E3/45 威世 | 完全替代 | VF20120S-E3/4W和VF20120S-E3/45的区别 |