VISHAY VS-FB190SA10 单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V
The is a 100V N-channel Power MOSFET, high current density power MOSFET is paralleled into a compact, high power module providing the best combination of switching, ruggedized design and very low on-resistance. The isolated package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500W. The low thermal resistance and easy connection to the package contribute to its universal acceptance throughout the industry.
漏源极电阻 0.0054 Ω
极性 N-Channel
耗散功率 568 W
阈值电压 3.3 V
漏源极电压Vds 100 V
上升时间 351 ns
输入电容Ciss 10700pF @25VVds
下降时间 335 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 568 W
安装方式 Surface Mount
引脚数 4
封装 SOT-227-4
长度 38.3 mm
宽度 25.7 mm
高度 12.3 mm
封装 SOT-227-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VS-FB190SA10 Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
VS-FB180SA10P 威世 | 类似代替 | VS-FB190SA10和VS-FB180SA10P的区别 |