VISHAY VS-CPV363M4FPBF 晶体管, IGBT阵列&模块, N沟道, 11 A, 2 V, 36 W, 600 V, SIP
The is a fast IGBT Module feature switching-loss rating includes all tail losses. The IGBT technology is the key to the advanced line of IMS Insulated Metal Substrate power modules. This module is more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.