VNS1NV04

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VNS1NV04概述

“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

Look no further than STMicroelectronics" low side power switch, a useful tool used for safely dealing with high-end frequencies. This charge controller has single output. This device has a maximum power dissipation of 8300 mW. It features 0.25Max Ohm switch on resistance. Its maximum power dissipation is 8300 mW. This device has a supply current of 0.1 mA and a minimum output current of 1.7 A. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube.

VNS1NV04中文资料参数规格
技术参数

输出接口数 2

通道数 1

漏源极电阻 250 mΩ

极性 N-Channel

耗散功率 8300 mW

漏源击穿电压 40.0 V

连续漏极电流Ids 1.70 A

上升时间 170 ns

输入数 1

下降时间 200 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 8300 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SO-8

外形尺寸

封装 SO-8

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买VNS1NV04
型号: VNS1NV04
制造商: ST Microelectronics 意法半导体
描述:“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

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