VNL5300S5-E

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VNL5300S5-E概述

STMICROELECTRONICS  VNL5300S5-E  驱动器, MOSFET, 低压侧, 3.5V-5.5V电源, 12µs延迟, SOIC-8

The is an OMNIFET III fully protected Low-side Driver made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from over-temperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention. Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-OFF.

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ESD protected
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Over-voltage clamp protection
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Thermal shutdown
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Current and power limitation
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Very low standby current
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Very low electromagnetic susceptibility
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Compliant with European directive 2002/95/EC
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Open drain status output
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2A Drain current
VNL5300S5-E中文资料参数规格
技术参数

电源电压DC 3.50V min

输出接口数 1

输出电流 2 A

针脚数 8

输出电流Max 2 A

输入数 1

下降时间Max 7000 ns

上升时间Max 11000 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

电源电压Max 5.5 V

电源电压Min 3.5 V

封装参数

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 车用, Automotive

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买VNL5300S5-E
型号: VNL5300S5-E
描述:STMICROELECTRONICS  VNL5300S5-E  驱动器, MOSFET, 低压侧, 3.5V-5.5V电源, 12µs延迟, SOIC-8
替代型号VNL5300S5-E
型号/品牌 代替类型 替代型号对比

VNL5300S5-E

ST Microelectronics 意法半导体

当前型号

当前型号

VNL5300S5TR-E

意法半导体

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VNL5300S5-E和VNL5300S5TR-E的区别

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