STMICROELECTRONICS VNL5300S5-E 驱动器, MOSFET, 低压侧, 3.5V-5.5V电源, 12µs延迟, SOIC-8
The is an OMNIFET III fully protected Low-side Driver made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from over-temperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention. Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-OFF.
电源电压DC 3.50V min
输出接口数 1
输出电流 2 A
针脚数 8
输出电流Max 2 A
输入数 1
下降时间Max 7000 ns
上升时间Max 11000 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
电源电压Max 5.5 V
电源电压Min 3.5 V
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 车用, Automotive
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VNL5300S5-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VNL5300S5TR-E 意法半导体 | 完全替代 | VNL5300S5-E和VNL5300S5TR-E的区别 |