VND1NV04TR-E

OMNIFET 全自动保护功率 MOSFET，STMicroelectronicsOMNIFET III 系列全自动保护低侧驱动器，根据坚固性标准进行了测量并提高了可靠性。 这些固态电源开关设计用于电感性或电阻负载，尤其是汽车环境。线性电流限制 热关闭 短路保护 ESD 保护 一体式夹 ### 智能电源开关，STMicroelectronics

OMNIFET 全自动保护功率 MOSFET，STMicroelectronics

OMNIFET III 系列全自动保护低侧驱动器，根据坚固性标准进行了测量并提高了可靠性。 这些固态电源开关设计用于电感性或电阻负载，尤其是汽车环境。

线性电流限制

热关闭

短路保护

ESD 保护

一体式夹

得捷:
IC PWR DRIVER N-CHANNEL 1:1 DPAK

欧时:
STMicroelectronics VND1NV04TR-E 智能电源开关, OMNIFET：全自动保护功率 MOSFET, 1.7A, 40V, 3引脚

立创商城:
VND1NV04TR E

贸泽:
门驱动器 N-Ch 40V 1.7A Omni

艾睿:
Thanks to the low side VND1NV04TR-E power switch, developed by STMicroelectronics, you can easily switch on and off with high voltages and currents. This charge controller has single output. It features 0.25Max Ohm switch on resistance. This device has a maximum power dissipation of 35000 mW. This device has a supply current of 0.1 mA and a minimum output current of 1.7 A. Its maximum power dissipation is 35000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery.

安富利:
Power Switch Lo Side 1.7A 3-Pin2+Tab TO-252 T/R

Chip1Stop:
Power Switch Lo Side 1.7A 3-Pin2+Tab TO-252 T/R

TME:
Driver; low-side switch; 1.7A; 35W; Channels:1; DPAK; 40V

Verical:
Current Limit SW 1-IN 1-OUT to 1.7A Automotive 3-Pin2+Tab TO-252 T/R