“ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
It"s easy to keep your circuit safe from high voltages with this simple low side power switch by STMicroelectronics. This charge controller has single output. It features 0.25Max Ohm switch on resistance. This device has a maximum power dissipation of 7000 mW. This device has a supply current of 0.1 mA and a minimum output current of 1.7 A. Its maximum power dissipation is 7000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery.
额定电压DC 40.0 V
额定电流 1.70 A
输出接口数 1
漏源极电阻 250 mΩ
极性 N-Channel
耗散功率 7 W
漏源击穿电压 40.0 V
连续漏极电流Ids 1.70 A
上升时间 170 ns
输出电流Max 1.7 A
输入数 1
下降时间 200 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 7000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.50 mm
宽度 3.50 mm
封装 TO-261-4
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VNN1NV0413TR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VNN1NV04PTR-E 意法半导体 | 类似代替 | VNN1NV0413TR和VNN1NV04PTR-E的区别 |
VNN1NV04 意法半导体 | 功能相似 | VNN1NV0413TR和VNN1NV04的区别 |