VISHAY VSMY7850X01-GS08 红外发光二极管, 850NM, SMD
The is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 1 year, MSL 2, according to J-STD-020.
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- High reliability
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- High radiant power
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- High radiant intensity
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- Low forward voltage
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- AEC-Q101 qualified
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- ±60° Angle of half intensity
额定功率 2.5 W
上升/下降时间 0.0165 µs
正向电压 2 V
波长 850 nm
视角 120°
峰值波长 850 nm
耗散功率 2500 mW
上升时间 15 ns
测试电流 1000 mA
正向电流 1 A
正向电压Max 2.5 V
正向电流Max 1000 mA
下降时间 18 ns
工作温度Max 100 ℃
工作温度Min -40 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 2
封装 SMD-2
高度 1.4 mm
封装 SMD-2
工作温度 -40℃ ~ 100℃ TA
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Automotive, 通信与网络, 消费电子产品, Communications & Networking, Consumer Electronics, 车用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99