电源负载分配开关, 低压侧, 60 V输入, 10 A, 0.15 ohm, 1输出, TO-252-3
Description
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Logic level input threshold
■ ESD protection
■ Schmitt trigger on input
■ High noise immunity
输出接口数 1
输出电流 15 A
供电电流 0.15 mA
针脚数 3
漏源极电阻 150 mΩ
极性 N-Channel
耗散功率 35 W
漏源击穿电压 60.0 V
连续漏极电流Ids 10.0 A
输出电流Max 6 A
输出电流Min 6 A
输入数 1
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 35000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VND10N06-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND10N06 意法半导体 | 类似代替 | VND10N06-E和VND10N06的区别 |
IPS1031RPBF 国际整流器 | 功能相似 | VND10N06-E和IPS1031RPBF的区别 |
IPS1021RPBF 国际整流器 | 功能相似 | VND10N06-E和IPS1021RPBF的区别 |