晶体管, MOSFET, N沟道, 7 A, 42 V, 0.14 ohm, 10 V, 3 V
For all your high current and voltage switching needs, use this low side power switch by STMicroelectronics to get the fastest on and off response. This charge controller has single output. This device has a maximum power dissipation of 60000 mW. This charge controller has an input voltage of 18Max V. It features 0.28Max Ohm switch on resistance. Its maximum power dissipation is 60000 mW. This device has a supply current of 0.25 mA and a minimum output current of 4 A. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube.
输出接口数 1
输出电流 11 A
供电电流 0.25 mA
针脚数 3
漏源极电阻 0.14 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 3 V
漏源极电压Vds 42 V
漏源击穿电压 42.0 V
连续漏极电流Ids 7.00 A
输入电压Max 18 V
输出电流Max 4 A
输出电流Min 4 A
输入数 1
工作温度Max 150 ℃
耗散功率Max 60000 mW
输入电压 18 V
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VND7N04-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND7N04TR-E 意法半导体 | 类似代替 | VND7N04-E和VND7N04TR-E的区别 |
VND7N0413TR 意法半导体 | 类似代替 | VND7N04-E和VND7N0413TR的区别 |
VND7N04 意法半导体 | 类似代替 | VND7N04-E和VND7N04的区别 |