VND3NV04 单通道 低边 自保护 6 V 7 A 120 mOhm 功率MOSFET - TO-252-3
Description
The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Features
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET analog driving
■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VND3NV04-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND3NV0413TR 意法半导体 | 类似代替 | VND3NV04-E和VND3NV0413TR的区别 |
VND3NV04 意法半导体 | 类似代替 | VND3NV04-E和VND3NV04的区别 |
VND3NV04TR-E 意法半导体 | 功能相似 | VND3NV04-E和VND3NV04TR-E的区别 |