VND10N06

ISO高侧智能功率固态继电器 ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description

The and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Logic level input threshold

■ ESD protection

■ Schmitt trigger on input

■ High noise immunity