VND5N07

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VND5N07概述

? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET

This low side power switch by STMicroelectronics is designed to connect a load to a power supply. This charge controller has single output. This device has a maximum power dissipation of 60000 mW. This charge controller has an input voltage of 18Max V. It features 0.2Max Ohm switch on resistance. This device has a supply current of 0.25 mA and a minimum output current of 5Max A. Its maximum power dissipation is 60000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This charge controller has a minimum operating temperature of -40 °C and a maximum of 150 °C.

VND5N07中文资料参数规格
技术参数

额定电压DC 70.0 V

额定电流 5.00 A

输出接口数 1

供电电流 0.25 mA

漏源极电阻 200 mΩ

耗散功率 60000 mW

漏源击穿电压 70.0 V

连续漏极电流Ids 5.00 A

输出电流Max 3.5 A

输出电流Min 5 A

耗散功率Max 60000 mW

电源电压Max 18 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

VND5N07引脚图与封装图
VND5N07引脚图
VND5N07封装图
VND5N07封装焊盘图
在线购买VND5N07
型号: VND5N07
描述:? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
替代型号VND5N07
型号/品牌 代替类型 替代型号对比

VND5N07

ST Microelectronics 意法半导体

当前型号

当前型号

VND5N07-E

意法半导体

类似代替

VND5N07和VND5N07-E的区别

BTS134D

英飞凌

功能相似

VND5N07和BTS134D的区别

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