VND14NV04

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VND14NV04概述

“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

电源开关/驱动器 1:1 N 通道 12A DPAK


得捷:
IC PWR DRIVER N-CHANNEL 1:1 DPAK


贸泽:
Gate Drivers N-Ch 40V 12A OmniFET


艾睿:
Dealing with high voltages and currents? Protect your circuit with the low side VND14NV04 power switch, developed by STMicroelectronics. This charge controller has single output. It features 0.035Max Ohm switch on resistance. This device has a maximum power dissipation of 74000 mW. This device has a supply current of 0.1 mA and a minimum output current of 12 A. Its maximum power dissipation is 74000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube.


Chip1Stop:
Power Switch Lo Side 12A 3-Pin2+Tab DPAK Tube


Win Source:
MOSFET N-CH 40V 12A DPAK


DeviceMart:
MOSFET N-CH 40V 12A DPAK


VND14NV04中文资料参数规格
技术参数

额定电压DC 40.0 V

额定电流 12.0 A

输出接口数 1

输出电流 12 A

漏源极电阻 35.0 mΩ

极性 N-Channel

耗散功率 74 W

漏源击穿电压 40.0 V

连续漏极电流Ids 12.0 A

输出电流Max 12 A

输入数 1

耗散功率Max 74000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买VND14NV04
型号: VND14NV04
描述:“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
替代型号VND14NV04
型号/品牌 代替类型 替代型号对比

VND14NV04

ST Microelectronics 意法半导体

当前型号

当前型号

VND14NV0413TR

意法半导体

完全替代

VND14NV04和VND14NV0413TR的区别

VND14NV04TR-E

意法半导体

类似代替

VND14NV04和VND14NV04TR-E的区别

VND14NV04-E

意法半导体

类似代替

VND14NV04和VND14NV04-E的区别

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