“ OMNIFET II ” :全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
电源开关/驱动器 1:1 N 通道 12A DPAK
得捷:
IC PWR DRIVER N-CHANNEL 1:1 DPAK
贸泽:
Gate Drivers N-Ch 40V 12A OmniFET
艾睿:
Dealing with high voltages and currents? Protect your circuit with the low side VND14NV04 power switch, developed by STMicroelectronics. This charge controller has single output. It features 0.035Max Ohm switch on resistance. This device has a maximum power dissipation of 74000 mW. This device has a supply current of 0.1 mA and a minimum output current of 12 A. Its maximum power dissipation is 74000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube.
Chip1Stop:
Power Switch Lo Side 12A 3-Pin2+Tab DPAK Tube
Win Source:
MOSFET N-CH 40V 12A DPAK
DeviceMart:
MOSFET N-CH 40V 12A DPAK
额定电压DC 40.0 V
额定电流 12.0 A
输出接口数 1
输出电流 12 A
漏源极电阻 35.0 mΩ
极性 N-Channel
耗散功率 74 W
漏源击穿电压 40.0 V
连续漏极电流Ids 12.0 A
输出电流Max 12 A
输入数 1
耗散功率Max 74000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
VND14NV04 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VND14NV0413TR 意法半导体 | 完全替代 | VND14NV04和VND14NV0413TR的区别 |
VND14NV04TR-E 意法半导体 | 类似代替 | VND14NV04和VND14NV04TR-E的区别 |
VND14NV04-E 意法半导体 | 类似代替 | VND14NV04和VND14NV04-E的区别 |