VND810SP-E

VND810SP-E图片1
VND810SP-E图片2
VND810SP-E图片3
VND810SP-E图片4
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VND810SP-E图片6
VND810SP-E概述

双通道高侧驱动器 Double channel high-side driver

Safely switch between voltages in your electronic circuit with this high side power switch by STMicroelectronics. This charge controller has 2 outputs. It features 0.16Max Ohm switch on resistance. This device has a maximum power dissipation of 52000 mW. This device has a supply current of 0.012 mA and a minimum output current of 5Max A. Its maximum power dissipation is 52000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This charge controller has an operating temperature range of -40 °C to 150 °C.

VND810SP-E中文资料参数规格
技术参数

额定功率 52 W

输出接口数 2

输出电流 3.5 A

供电电流 0.012 mA

通道数 2

耗散功率 52 W

输出电流Max 3.5 A

输出电流Min 5 A

工作温度Max 150 ℃

工作温度Min 40 ℃

耗散功率Max 52000 mW

电源电压 5.5.36 VDC

电源电压Max 36 V

电源电压Min 5.5 V

封装参数

安装方式 Surface Mount

引脚数 12

封装 PowerSO-10

外形尺寸

封装 PowerSO-10

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

VND810SP-E引脚图与封装图
VND810SP-E引脚图
VND810SP-E封装图
VND810SP-E封装焊盘图
在线购买VND810SP-E
型号: VND810SP-E
描述:双通道高侧驱动器 Double channel high-side driver
替代型号VND810SP-E
型号/品牌 代替类型 替代型号对比

VND810SP-E

ST Microelectronics 意法半导体

当前型号

当前型号

VND810SPTR-E

意法半导体

完全替代

VND810SP-E和VND810SPTR-E的区别

VND810SP

意法半导体

类似代替

VND810SP-E和VND810SP的区别

VND810SP13TR

意法半导体

类似代替

VND810SP-E和VND810SP13TR的区别

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