VNB35NV04TR-E

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VNB35NV04TR-E概述

MOSFET

Safely switch between voltages in your electronic circuit with this low side power switch by STMicroelectronics. This charge controller has single output. This device has a maximum power dissipation of 125000 mW. It features 0.013Max Ohm switch on resistance. Its maximum power dissipation is 125000 mW. This device has a supply current of 0.1 mA and a minimum output current of 30 A. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components.

VNB35NV04TR-E中文资料参数规格
技术参数

输出接口数 1

输出电流 60 A

供电电流 0.1 mA

针脚数 3

极性 N-Channel

耗散功率 125 W

漏源击穿电压 70.0 V

连续漏极电流Ids 35.0 A

上升时间 100 µs

输出电流Max 30 A

输出电流Min 30 A

输入数 1

下降时间 110 µs

工作温度Max 150 ℃

工作温度Min 40 ℃

耗散功率Max 125000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买VNB35NV04TR-E
型号: VNB35NV04TR-E
描述:MOSFET
替代型号VNB35NV04TR-E
型号/品牌 代替类型 替代型号对比

VNB35NV04TR-E

ST Microelectronics 意法半导体

当前型号

当前型号

VNB35NV0413TR

意法半导体

完全替代

VNB35NV04TR-E和VNB35NV0413TR的区别

VNB35NV04-E

意法半导体

类似代替

VNB35NV04TR-E和VNB35NV04-E的区别

IPS1021SPBF

国际整流器

功能相似

VNB35NV04TR-E和IPS1021SPBF的区别

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