STMICROELECTRONICS VNB35N07TR-E 晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
The is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
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- Diagnostic feedback through input pin
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- ESD protection
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- Direct access to the gate of the power MOSFET analogue driving
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- Compatible with standard power MOSFET
输出接口数 1
输出电流 35 A
供电电流 0.25 mA
针脚数 3
漏源极电阻 0.028 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 80 V
连续漏极电流Ids 18.0 A
输入电压Max 18 V
输出电流Max 25 A
输出电流Min 25 A
输入数 1
工作温度Max 150 ℃
耗散功率Max 125000 mW
输入电压 18 V
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.2 mm
宽度 9.15 mm
封装 TO-263-3
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 车用, 电源管理, Automotive, 工业, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
VNB35N07TR-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
VNB35N0713TR 意法半导体 | 完全替代 | VNB35N07TR-E和VNB35N0713TR的区别 |
IPS1021SPBF 国际整流器 | 功能相似 | VNB35N07TR-E和IPS1021SPBF的区别 |
IPS1011SPBF 国际整流器 | 功能相似 | VNB35N07TR-E和IPS1011SPBF的区别 |