VOM617A-8T

低输入电流，光电晶体管输出， SOP- 4 ，微型扁平封装 Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package

DESCRIPTION

The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.

FEATURES

• Operating temperature from - 55 °C to + 110 °C

• SOP-4 mini-flat package

• Isolation test voltage, 3750 VRMS

• Low saturation voltage

• Fast switching times

• Low coupling capacitance

• End-stackable, 0.100" 2.54 mm spacing

• CTR range 40 % to 600 %, IF= 5 mA