


光电耦合器,光电晶体管输出,耐高温, 110 ΣC ,额定 Optocoupler, Phototransistor Output, High Temperature, 110 ∑C, Rated
DESCRIPTION
The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.
FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-0
• Pollution degree 2 DIN/VDE 0110/resp. IEC 60664
• Climatic classification 55/110/21 IEC 60068 part 1
• Temperature range - 55 °C to + 110 °C
• Rated impulse voltage transient overvoltage VIOTM = 6 kVpeak
• Isolation test voltage partial discharge test voltage Vpd = 1.6 kV
• Rated isolation voltage RMS includes DC VIOWM = 600 VRMS
• Rated recurring peak voltage repetitive VIORM = 850 Vpeak
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 250
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Circuits for safe protective separation against electrical shock according to safety class II reinforced isolation:
• for appl. class I - IV at mains voltage 300 V
• for appl. class I - IV at mains voltage 600 V according to table 1 of IEC 60664-1, suitable for:
\- Switch-mode power supplies
\- Line receiver
\- Computer peripheral interface
\- Microprocessor system interface
上升/下降时间 3µs, 4.7µs
通道数 1
正向电压 1.43 V
耗散功率 70 mW
上升时间 3 µs
隔离电压 5000 Vrms
正向电流 60 mA
输出电压Max 70 V
正向电压Max 1.6 V
正向电流Max 60 mA
下降时间 4.7 µs
工作温度Max 110 ℃
工作温度Min -55 ℃
耗散功率Max 70 mW
安装方式 Through Hole
引脚数 4
封装 DIP-4
高度 3.81 mm
封装 DIP-4
工作温度 -55℃ ~ 110℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free