VNP10N07FI

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VNP10N07FI概述

? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION

The VNB10N07, VNK10N07FM, and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

■ LINEAR CURRENT LIMITATION

■ THERMAL SHUT DOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET ANALOG DRIVING

■ COMPATIBLE WITH STANDARD POWER MOSFET

VNP10N07FI中文资料参数规格
技术参数

额定电压DC 70.0 V

额定电流 10.0 A

输出接口数 1

输出电流 7 A

供电电流 0.25 mA

漏源极电阻 100 mΩ

极性 N-Channel

耗散功率 31 W

漏源击穿电压 70.0 V

连续漏极电流Ids 10.0 A

输出电流Max 7 A

输出电流Min 7 A

耗散功率Max 31000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 ISOWATT-220-3

外形尺寸

高度 16.4 mm

封装 ISOWATT-220-3

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买VNP10N07FI
型号: VNP10N07FI
描述:? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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