VNP20N07

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VNP20N07概述

? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION

The is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.

■ LINEAR CURRENT LIMITATION

■ THERMAL SHUT DOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET ANALOG DRIVING

■ COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE

VNP20N07中文资料参数规格
技术参数

额定电压DC 70.0 V

额定电流 20.0 A

输出接口数 1

通道数 1

漏源极电阻 50 mΩ

耗散功率 83 W

漏源击穿电压 70 V

连续漏极电流Ids 20.0 A

输入电压Max 18 V

输出电流Max 14 A

输入数 1

耗散功率Max 83000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

VNP20N07引脚图与封装图
VNP20N07引脚图
VNP20N07封装图
VNP20N07封装焊盘图
在线购买VNP20N07
型号: VNP20N07
描述:? OMNIFET ?:岗AUTOPROTECTED功率MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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